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Proposal of a neutron transmutation doping facility for n-type spherical silicon solar cell at high-temperature engineering test reactor

Ho, H. Q.; 本多 友貴; 元山 瑞樹*; 濱本 真平; 石井 俊晃; 石塚 悦男

Ho, H. Q.; Honda, Yuki; Motoyama, Mizuki*; Hamamoto, Shimpei; Ishii, Toshiaki; Ishitsuka, Etsuo

The p-type spherical silicon solar cell is a candidate for future solar energy with low fabrication cost, however, its conversion efficiency is only about 10%. The conversion efficiency of a silicon solar cell can be increased by using n-type silicon semiconductor as a substrate. This study proposed a new method of neutron transmutation doping silicon (NTD-Si) for producing the n-type spherical solar cell, in which the Si-particles are irradiated directly instead of the cylinder Si-ingot as in the conventional NTD-Si. By using a screw, an identical resistivity could be achieved for the Si-particles without a complicated procedure as in the NTD with Si-ingot. Also, the reactivity and neutron flux swing could be kept to a minimum because of the continuous irradiation of the Si-particles. A high temperature engineering test reactor (HTTR), which is located in Japan, was used as a reference reactor in this study. Neutronic calculations showed that the HTTR has a capability to produce about 40 ton of 10 $$Omega$$ cm resistivity Si-particles for fabrication of the n-type spherical solar cell.

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パーセンタイル:22.96

分野:Chemistry, Inorganic & Nuclear

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